| PART |
Description |
Maker |
| IXFH26N50P IXFV26N50PS IXFV26N50P |
Avalanche Rated Fast Instrinsic Diode
|
IXYS[IXYS Corporation]
|
| MMIX1F160N30T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F230N20T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F132N50P3 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXFH60N60X2A |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTA110N12T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| MMIX1T660N04T4 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ3N150M |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| FT0055A |
RADIATION TOLERANT 30 AMP, 100 Volts, 25 mΩ Avalanche Rated N-MOSFET
|
Solid States Devices, Inc
|
| IRFP460PBF |
Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead
|
International Rectifier
|
| IXTH500N04T2 IXTT500N04T2 |
500 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS CORP
IXYS Corporation
|
